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Welcome to Atomicity Systems

Atomicity has developed the next generation atomic layer deposition (ALD) tool technology. The patent pending technology is a revolution in the field of ALD, because it dramatically increases effective deposition rates, while maintaining excellent conformality. This advance makes ALD feasible and competitive in semiconductor manufacturing, nanotechnology, MEMS, optics, and solar cells.
Conceptual
Prototype Tool
Capability
Patent Pub. 20060073276

Conceptual

Multi-zone Technology

Prototype Tool

  • 100 mm wafers
  • Manual load
  • Two zone
  • 0.25 to 4+ cycles/sec
  • 50 cycles: Al2O3 deposited at 2 cycles/sec 190 °C.
  • 200 nm wide x 6 um deep trench.
  • ~100% step coverage at ~ 0.8 Å/cycle yields ~100 Å/min.

Capability

The Atomicity Advantage

Unprecedented throughput potential - deposition rates of ~200 angstroms/min have been achieved with trimethlyaluminum and water chemistry. This deposition rate is directly comparable to traditional CVD and PVD rates [1].

Film quality – XPS results indicate very low carbon levels and good aluminum to oxygen stoichiometric ratios. The system is designed to maintain low particle and low trace element contamination.

Cost of Ownership – In addition to the dramatic increase in deposition rate, the design largely maintains the separation of precursors except around the region of desired application. This reduces vacuum pump degradation substantially and the high precursor utilization minimizes chemical loading and consumption.